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Growth and Dislocation Etching of InBi 0.8 Sb 0.2 Single Crystal
Author(s) -
Pandya G. R.,
Desai C. F.,
Shah R. C.,
Shah K. R.
Publication year - 1998
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(1998)33:5<733::aid-crat733>3.0.co;2-x
Subject(s) - dislocation , cleavage (geology) , materials science , yield (engineering) , etching (microfabrication) , crystallography , single crystal , crystal (programming language) , crystal growth , mineralogy , analytical chemistry (journal) , composite material , chemistry , chromatography , layer (electronics) , fracture (geology) , computer science , programming language
InBi 0.8 Sb 0.2 single crystals have been grown by zone melting method. The freezing interface temperature gradient of 3 °C/cm has been found to yield the best quality crystals obtainable at growth velocity 1.0 cm/hr. Traingular features have been obtained on the free surface of the as grown crystal. A new dislocation etchant based on nitric acid has been found to give reproducible etch‐pitting on the cleavage surface. Standard tests for a dislocation etchant have been carried out and results are reported.