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Interface Dynamics during Indium Antimonide Crystal Growth
Author(s) -
Campbel T. A.,
Koster J. N.
Publication year - 1998
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(1998)33:5<707::aid-crat707>3.0.co;2-t
Subject(s) - indium antimonide , indium , crystal growth , eutectic system , materials science , temperature gradient , thermocouple , crystal (programming language) , homogeneity (statistics) , stoichiometry , electron microprobe , zone melting , analytical chemistry (journal) , microprobe , crystallography , chemistry , optoelectronics , mineralogy , composite material , metallurgy , microstructure , statistics , physics , mathematics , quantum mechanics , chromatography , computer science , programming language
Experiments with a stoichiometric InSb compound were first performed at small temperature gradient across the crystal/melt interface of 3 °C/cm and furnace translation velocity, V frn , of 2 μ/sec. Known growth requirements for quality crystals were confirmed. They are, (1) the interface temperature must be close to the congruent melting temperature and, (2) the interface must be located within the adiabatic zone. These requirements can be obtained only through specific settings of the heater temperatures. An X‐ray radioscopic system has been modified to accommodate real‐time visualization of the crystal/melt interface during vertical Bridgman‐Stockbarger growth of InSb. It is shown that asymmetric temperature settings of the heaters can be advantageously used to minimize defect formation. The interface temperature was assessed indirectly with calibrated outside thermocouples. Optical microscopy and electron microprobe analyses provided feedback on crystalline homogeneity.