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Effects of the Substrate Crystals upon the Structure of Thermal Oxide Layers on Si
Author(s) -
Shimura T.,
Sensui Mr. H.,
Umeno M.
Publication year - 1998
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(1998)33:4<637::aid-crat637>3.0.co;2-m
Subject(s) - wafer , oxide , substrate (aquarium) , layer (electronics) , materials science , chemical vapor deposition , diffraction , deposition (geology) , thermal , chemical engineering , thin film , crystallography , chemistry , nanotechnology , optics , metallurgy , paleontology , oceanography , physics , engineering , sediment , meteorology , biology , geology
Comparisons of Bragg reflections from thermal oxide thin films on Si wafers were made for five sets of samples with various kinds of substrates. The intensities of the reflections for the samples with the substrate of better quality were stronger than those of poor one, indicating that the structures of the crystalline SiO 2 in the oxide layer were related with the quality of the Si substrates. It is also shown that no diffraction peaks were observed from the oxide layers grown on Si substrates by chemical vapor deposition.