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AES Investigation of Chemical Treatment Effect on CdTe and CdZnTe Surfaces
Author(s) -
Iller A.,
Karczewski G.,
Karczewski G.,
Kolmhofer G.,
Łusakowska E.,
Sitter H.
Publication year - 1998
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(1998)33:3<401::aid-crat401>3.0.co;2-u
Subject(s) - cadmium telluride photovoltaics , materials science , chemistry , chemical engineering , nanotechnology , engineering
{211} polar surfaces of a Cd 0.96 Zn 0.04 Te chemically treated single crystal were investigated by Auger electron spectroscopy depth profiling. It was found that the use of a discriminatory “black‐white” etchant causes the formation of a thick layer with cadmium having been severely depleted at both (211) A and (211) B faces. The thickness of this layer is larger by a factor of 2 for the matt black face then for the bright and reflecting face. AES investigation of chemical treatment influence on (100) CdTe epitaxial layer surface has been performed. It has been established that etching in Br/methanol solution removes S, Cl and O containing contaminants from the surface, but simultaneously forms a Cd‐depleted layer.