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Space‐Charge‐Limited Current Effects in p‐Type CuIn 0.8 Ga 0.2 Se 2 /In Schottky Diodes
Author(s) -
Hernández E.
Publication year - 1998
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(1998)33:2<285::aid-crat285>3.0.co;2-s
Subject(s) - saturation current , schottky diode , diode , space charge , schottky barrier , condensed matter physics , depletion region , materials science , diffusion , current (fluid) , optoelectronics , charge (physics) , biasing , indium , semiconductor , voltage , physics , thermodynamics , quantum mechanics , electron
Schottky diodes, fabricated by local in diffusion of indium onto p‐type single crystals of CuIn 0.8 Ga 0.2 Se 2 have been shown to exhibit space‐charge‐limited current effects under forward bias. Two regions are clearly observed in the current‐voltage characteristics of the device; the first one associated with the saturation‐velocity regime and the second region that corresponds to the ballistic regime with a V 3/2 dependence (Child‐Langmuir law). The observed characteristic was used to calculate the semiconductor potential ( E i ≈ 0.15 eV). By means of photovoltaic effects the barrier height (φ B ≈ 0.74 eV) and the ideality factor ( n = 1.7) of the diode were also obtained.