Premium
Influence of Thermal Processing Parameters and Material Properties on Velocity Configurations in Semiconductor Melts During the Vertical Bridgman Growth Technique
Author(s) -
Bachran A.,
Reinshaus P.,
Seifert W.
Publication year - 1998
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(1998)33:1<27::aid-crat27>3.0.co;2-o
Subject(s) - materials science , semiconductor , ampoule , prandtl number , thermal , rotational symmetry , mechanics , crystal growth , crystal (programming language) , boundary value problem , thermodynamics , composite material , heat transfer , physics , optoelectronics , quantum mechanics , computer science , programming language
The paper deals with the influence of thermal boundary conditions and thermophysical material properties on velocity configurations in Bridgman arrangements. Numerical simulations are presented for (Bi 1—x Sb x ) 2 Te 3 melts as a representative for semiconductor melts of low Prandtl numbers. Based on two characteristic temperature profiles, results have been calculated for 2D‐axisymmetric and 3D Bridgman configurations applying the FIDAP TM FEM code using pseudo‐steady‐state conditions with a constant growth rate. For simulation close to real growth conditions the model used includes real geometry parameters as well as the experimentally measured temperature distribution at the outer ampoule surface and temperature depending material properties. The calculations show significant variations in the flow configuration and the resulting radial inhomogeneity of the grown crystal depending on the thermal processing parameters used.