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Magnetic Field Dependence of Optical Anisotropy in In x Ga 1—x As Quantum Dots
Author(s) -
Takagaki Y.,
Ploog K.H.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(200105)225:1<237::aid-pssb237>3.0.co;2-p
Subject(s) - quantum dot , condensed matter physics , physics , wave function , anisotropy , magnetic field , electro absorption modulator , field (mathematics) , quantum dot laser , quantum well , quantum mechanics , mathematics , pure mathematics , laser
Abstract We present a mechanism that gives rise to a strong magnetic field dependence of the optical properties in quantum dots even when the dots are too small to have the orbital wavefunction significantly influenced by the field. For large indium contents x ∼ 1, top valence band levels in In x Ga 1— x As quantum dots exhibit strong entanglement of the states of which the envelope wavefunction is characterized by s‐ and p‐type symmetries. Although the optical anisotropy associated with each hole level is nearly independent of the magnetic field, the total anisotropy is enhanced when a level crossing is induced by the field.