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980 nm Quantum Dot Lasers with Very Small Threshold Current Densities
Author(s) -
Klopf F.,
Reithmaier J.P.,
Forchel A.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(200104)224:3<845::aid-pssb845>3.0.co;2-5
Subject(s) - quantum dot laser , quantum dot , laser , current density , current (fluid) , optoelectronics , materials science , active layer , wavelength , quantum , semiconductor laser theory , physics , layer (electronics) , optics , nanotechnology , quantum mechanics , thermodynamics , thin film transistor
Quantum dot lasers based on a single active layer with total external quantum efficiencies of up to 80% (>1 W/A) and threshold current densities as low as 54 A/cm 2 have been realized. By direct comparison with a quantum well reference structure the effect of the active layer on important device properties is demonstrated. The difference in the gain properties has a direct impact on the length dependence of the threshold current density and makes quantum dot lasers superior in the case of long cavities. Furthermore, the differences in the sensitivity of emission wavelength and threshold current density to operation temperature have been investigated.