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Radiative Inter‐Sublevel Transitions in InGaAs/AlGaAs Quantum Dots
Author(s) -
Weber A.,
Goede K.,
Grundmann M.,
Heinrichsdorff F.,
Bimberg D.,
Ustinov V.M.,
Zhukov A.E.,
Ledentsov N.N.,
Kopev P.S.,
Alferov Zh.I.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(200104)224:3<833::aid-pssb833>3.0.co;2-h
Subject(s) - photoexcitation , quantum dot , infrared , lasing threshold , optoelectronics , laser , excitation , quantum well , quantum dot laser , radiative transfer , radiation , physics , gallium arsenide , materials science , atomic physics , optics , quantum mechanics
We report on the emission of mid‐infrared (MIR) radiation from InGaAs/AlGaAs quantum dots upon photoexcitation and electrical injection. Mid‐infrared radiation is achieved from bipolar quantum‐dot lasers during near‐infrared lasing. The MIR spectrum exhibits a peak at 16 μm and is dominantly TM polarized. The MIR intensity exhibits a superlinear dependence on the injection. These results are compared to optically pumped emission from InGaAs/GaAs quantum dots. The unpolarized spectrum shows peaks at 15 and 10 μm. The MIR intensity increases sublinearly with excitation power.