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Optical and Photocurrent Spectroscopy Studies of Inter‐ and Intra‐Band Transitions in Size‐Tailored InAs/GaAs Quantum Dots
Author(s) -
Mukhametzhanov I.,
Chen Z.H.,
Baklenov O.,
Kim E.T.,
Madhukar A.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(200104)224:3<697::aid-pssb697>3.0.co;2-m
Subject(s) - quantum dot , laser linewidth , photocurrent , spectroscopy , photoluminescence , materials science , condensed matter physics , optoelectronics , physics , optics , laser , quantum mechanics
Combined inter‐ and intra‐band spectroscopy studies are presented on structurally well‐characterized InAs/GaAs(001) self‐assembled quantum dots grown via conventional continuous deposition and the innovative punctuated island growth approach. Temperature and power dependent photoluminescence (PL) and PL Excitation (PLE) on these remarkably uniform quantum dot based samples (with typical PL linewidth ≈25 meV), reveal details of size‐dependent electronic structure. These studies are complemented with systematic near‐ and middle‐infrared photocurrent spectroscopy for inter‐band through electron intra‐band transitions as a function of temperature and applied electric field.