Premium
STM Observation of Single Electron Charging in 70 nm InAs Quantum Dots
Author(s) -
Chang T.H.,
Yang C.H.,
Yang M.J.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(200104)224:3<693::aid-pssb693>3.0.co;2-1
Subject(s) - coulomb blockade , quantum dot , quantum tunnelling , scanning tunneling microscope , electron , electron beam lithography , condensed matter physics , materials science , coulomb , scanning tunneling spectroscopy , optoelectronics , voltage , atomic physics , physics , nanotechnology , resist , quantum mechanics , transistor , layer (electronics)
Using electron‐beam lithography and reactive ion etching, we have patterned InAs/AlSb‐based double‐barrier resonant tunneling structures into dots of 70 nm in diameter. The confining potential of electrons in the InAs quantum disc is abrupt and square. A scanning tunneling microscope is adopted to measure the dc current–voltage characteristics at 4.2 K, and features owing to Coulomb blockade and Coulomb staircase can be clearly identified. In addition, the current–voltage characteristics display telegraph noise due to charging and discharging of single electrons at surface states.