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Single‐Electron Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential
Author(s) -
Versen M.,
Schmidt K.H.,
Bock C.,
Reuter D.,
Wieck A.D.,
Kunze U.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(200104)224:3<669::aid-pssb669>3.0.co;2-q
Subject(s) - quantum dot , coulomb blockade , quantum tunnelling , quantum point contact , condensed matter physics , excited state , heterojunction , conductance , electron , physics , capacitance , saddle point , quantum dot laser , fermi gas , coulomb , atomic physics , quantum well , electrode , transistor , optoelectronics , quantum mechanics , voltage , laser , geometry , mathematics
InAs quantum dots were embedded in a two‐dimensional electron gas of a modulation doped heterostructure. A constriction was lithographically defined to allow electron transport through at maximum three quantum dots. Sharp resonances appear at the onset of the conductance which are attributed to electron tunneling through the first excited state of a single dot within the constriction. A Coulomb blockade energy of ≈12 meV was estimated for this energy level which is in good agreement with capacitance data measured on a dot ensemble. When the source bias is varied Coulomb blocked regimes can be observed which are typical for single electron devices.