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Polaron Interaction in InAs/GaAs Quantum Dots and Resonant Photoluminescence
Author(s) -
Bissiri M.,
Baldassarri H.v.H. G.,
Capizzi M.,
Fomin V.M.,
Gladilin V.N.,
Devreese J.T.
Publication year - 2001
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(200104)224:3<639::aid-pssb639>3.0.co;2-1
Subject(s) - photoluminescence , polaron , quantum dot , adiabatic process , phonon , condensed matter physics , excitation , spectral line , band gap , electron , physics , optoelectronics , materials science , quantum mechanics
In an adiabatic approach, the efficiency of the electron–phonon interaction (EPI) can be determined by measuring the ratio between the intensities of two of the phonon replicas that EPI induces in photoluminescence (PL) spectra. In low‐dimensional structures such as InAs/GaAs quantum dots (QDs), this ratio depends on the excitation energy E exc . Moreover, the evolution of the PL spectra intensity and lineshape with E exc is quite elaborate. We reproduce well this evolution for E exc ranging from far below to above the GaAs bandgap by introducing an effective Huang‐Rhys factor S , a commonly used measure of EPI. Nevertheless, the value of S remains much higher than predicted in an adiabatic model, which can hardly account for the reported dependence of S on QD size and shape. The likely source of this lack of consistency is briefly discussed.