Premium
Analysis of Distortions in 〈110〉 Tilt Silicon Bicrystals
Author(s) -
Lebouvier B.,
Hairie A.,
Nouet G.,
Paumier E.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(200008)220:2<811::aid-pssb811>3.0.co;2-z
Subject(s) - phonon , silicon , tilt (camera) , materials science , condensed matter physics , grain boundary , composite material , physics , mathematics , geometry , optoelectronics , microstructure
The empirical potentials used for defect simulation in silicon are fitted on elastic or phonon properties. Usually they are not able to take into account all the distortions present in a defected material. On the basis of the potential proposed by Vanderbilt, Taole and Narasimhan a method is presented to separate the contribution of distortions linked to elastic properties from the contribution of distortions linked to phonon properties. The method is applied to grain boundaries in silicon simulated by potentials in the harmonic approximation. The phonon contribution is found slightly predominant with respect to the elastic one.