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Coulomb Gap Energy in Amorphous Si x Ge 1–x Films
Author(s) -
Aoki N.,
Nara K.,
Ochiai Y.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(200003)218:1<5::aid-pssb5>3.0.co;2-j
Subject(s) - amorphous solid , condensed matter physics , crossover , materials science , coulomb , alloy , atmospheric temperature range , range (aeronautics) , variable range hopping , band gap , thermodynamics , crystallography , metallurgy , physics , chemistry , composite material , quantum mechanics , thermal conduction , artificial intelligence , computer science , electron
We have measured the low temperature resistance in amorphous Si x Ge 1— x alloy films. Fitting to the theoretical results, we found two kinds of transport regime in the low temperature transport, variable range hopping type ( T —1/4 ) and Coulomb gap type ( T —1/2 ), and can determine the crossover temperature. The crossover temperature clearly depends on the ratio of the alloy composition.