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Hopping Domain Parameters
Author(s) -
Aladashvili D.I.,
Adamia Z.A.,
Gogoladze N.V.,
Tzakadze E.L.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(200003)218:1<39::aid-pssb39>3.0.co;2-j
Subject(s) - condensed matter physics , domain (mathematical analysis) , physics , electric field , current (fluid) , domain wall (magnetism) , materials science , mathematics , magnetic field , mathematical analysis , quantum mechanics , magnetization , thermodynamics
On the basis of the results obtained by Aladashvili et al. (1997) it may be argued that current oscillations in the external circuit (Aladashvili et al., 1988) are associated with “hopping” domain periodic formation and travelling in the bulk of the sample; the domain motion probably occurs along dead end sections of the hopping network, responsible for the drooping region in the current–voltage characteristic (Nguyen and Shklovskii, 1981). In the present work the actual electric field distribution in the hopping domains is measured; it is shown that hopping domain is of triangle shape with equal leading and back edges. Their wall thicknesses are determined. The hopping carrier mobility is measured.