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Insulator–Metal Transition and Large Paramagnetic Effect at High Pressure in Glassy Semiconductors
Author(s) -
Klinger M.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(200003)218:1<217::aid-pssb217>3.0.co;2-#
Subject(s) - condensed matter physics , paramagnetism , semiconductor , materials science , metal–insulator transition , high pressure , insulator (electricity) , metal , engineering physics , physics , metallurgy , optoelectronics
An insulator–metal transition and a large paramagnetic effect are predicted to occur in glassy semiconductors at moderate high pressure, which are due to a strong increase of the concentration of negative‐U centres, basic charge carriers, and positive‐U centres, paramagnetic centres, and their delocalization giving rise to predominant metallic type dc conductivity.