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Off‐Diagonal Disorder in the Anderson Model of Localization
Author(s) -
Biswas P.,
Cain P.,
Römer R.A.,
Schreiber M.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(200003)218:1<205::aid-pssb205>3.0.co;2-b
Subject(s) - scaling , anderson impurity model , diagonal , transfer matrix , anderson localization , hamiltonian (control theory) , statistical physics , exponent , critical exponent , physics , nonlinear system , diagonal matrix , condensed matter physics , mathematics , quantum mechanics , geometry , computer science , electron , mathematical optimization , linguistics , philosophy , computer vision
We examine the localization properties of the Anderson Hamiltonian with additional off‐diagonal disorder using the transfer‐matrix method and finite‐size scaling. We compute the localization lengths and study the metal–insulator transition (MIT) as a function of diagonal disorder, as well as its energy dependence. Furthermore we investigate the different influence of odd and even system sizes on the localization properties in quasi one‐dimensional systems. Applying the finite‐size scaling approach in conjunction with a nonlinear fitting procedure yields the critical parameters of the MIT. In three dimensions, we find that the resulting critical exponent of the localization length agrees with the exponent for the Anderson model with pure diagonal disorder.