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Peculiarities of the Microwave Magnetoresistanc of Compensated Ge:As near the Metal‐‐Insulator Transition
Author(s) -
Veinger A.I.,
Zabrodskii A.G.,
Tisnek T.V.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(200003)218:1<189::aid-pssb189>3.0.co;2-4
Subject(s) - condensed matter physics , magnetoresistance , metal–insulator transition , microwave , materials science , electron , insulator (electricity) , magnetic field , metal , weak localization , doping , physics , optoelectronics , quantum mechanics , metallurgy
The contactless technique of electron paramagnetic resonance was used to measure magnetoresistance (MR) phenomena in heavily doped and compensated Ge:As both in the metallic and insulator phases near the metal–insulator transition. The field and temperature characteristics of the MR derivative show two main origins: weak localization in the low fields resulting in negative MR and electron interaction in strong fields resulting in positive MR. For insulating samples only a small negative MR is observed with a low‐field characteristic behavior. The results obtained are compared with the quantum corrections theory.