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Hall Plateau Quantization Due to Hopping Caused by Electron–Phonon Interaction
Author(s) -
Riess J.,
Bicout D.,
Duguet T.,
Magyar P.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(200003)218:1<185::aid-pssb185>3.0.co;2-k
Subject(s) - condensed matter physics , quantum hall effect , quantization (signal processing) , plateau (mathematics) , phonon , dissipative system , physics , hall effect , dissipation , electron , thermal hall effect , electrical resistivity and conductivity , quantum mechanics , mathematics , mathematical analysis , algorithm
Abstract We perform model calculations showing that electron–phonon interaction in the presence of a static substrate potential generates a hopping contribution to the Hall current which increases the width of the quantized Hall plateaus. This can explain why in typical quantum Hall systems the plateaus of σ xy are slightly larger than those of the dissipative conductivity. Further, we show that in special situations even the entire width of the Hall plateau is due to this phonon induced hopping current. These results also show that absence of dissipation is not indispensable for the quantization of σ xy