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Hopping Magnetoresistance in a Single 2D Layer in Parallel Magnetic Fields
Author(s) -
Khondaker S.I.,
Pepper M.,
Ritchie D.A.,
Shlimak I.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(200003)218:1<181::aid-pssb181>3.0.co;2-#
Subject(s) - magnetoresistance , condensed matter physics , layer (electronics) , materials science , magnetic field , physics , nanotechnology , quantum mechanics
Large positive magnetoresistance has been observed in parallel magnetic fields in a single 2D layer in a delta‐doped GaAs/AlGaAs heterostructure with a variable‐range‐hopping (VRH) mechanism of conductivity. This implies that spins play an important role in 2D VRH conductivity. A possible explanation involves hopping via double occupied states in the upper Hubbard band, where the intra‐state correlation of spins is important.