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Hysteresis of the Variable Range Hopping Magnetoresistance in the Moderately Compensated p‐type Ge
Author(s) -
Andreev A.G.,
Chernyaev A.V.,
Egorov S.V.,
Parfeniev R.V.,
Zabrodskii A.G.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(200003)218:1<165::aid-pssb165>3.0.co;2-s
Subject(s) - condensed matter physics , magnetoresistance , metal–insulator transition , materials science , doping , variable range hopping , electrical resistivity and conductivity , drop (telecommunication) , hysteresis , insulator (electricity) , magnetic field , metal , physics , optoelectronics , thermal conduction , electrical engineering , metallurgy , engineering , quantum mechanics , composite material
The magnetoresistance hysteresis phenomenon has been discovered in the regime of variable range hopping via Coulomb gap states in moderately compensated p‐type Ge:Ga after a premagnetization at several kOe. A series of samples was prepared by neutron transmutation doping of pure Ge and covered a wide doping range including the metal–insulator transition. In a critical field of about 700 Oe the hysteresis is accompanied by a sharp resistivity drop, characterized by a well pronounced maximum for a doping level of 0.4 on the insulator side of the metal–insulator transition. The drop is created by the energy output overheating during the remagnetization of the initially magnetized sample. Possible mechanisms of the initial magnetization are discussed.