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Mechanism of Two‐Level Hopping Current Fluctuations in Mesoscopic a‐Si Based Structures
Author(s) -
Stepi.P.,
Yakimov A.I.,
Dvurechenskii A.V.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(200003)218:1<155::aid-pssb155>3.0.co;2-w
Subject(s) - mesoscopic physics , metastability , condensed matter physics , materials science , annealing (glass) , amorphous solid , silicon , amorphous silicon , electric field , optoelectronics , nanotechnology , physics , chemistry , crystalline silicon , quantum mechanics , crystallography , composite material
Two‐level fluctuations (random telegraph noise) of transverse hopping current have been investigated in mesoscopic nanostructures fabricated on a submicrometer area of a thin amorphous silicon layer. An electric field and light‐induced change of the system lifetimes in the high and low conductive states is observed. The results are explained by formation and annealing of metastable defects in the atomic two‐level hydrogen‐related systems.