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Calculation of Electronic States in Semiconductor Heterostructures with an Empirical spds* Tight‐Binding Model
Author(s) -
Scholz R.,
Jancu J.M.,
Beltram F.,
Bassani F.
Publication year - 2000
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(200001)217:1<449::aid-pssb449>3.0.co;2-b
Subject(s) - superlattice , pseudopotential , tight binding , heterojunction , transferability , semiconductor , condensed matter physics , ab initio , electronic structure , formalism (music) , materials science , physics , quantum mechanics , optoelectronics , computer science , art , musical , logit , machine learning , visual arts
We illustrate how the tight‐binding formalism can be used to accurately compute the electronic states in semiconductor quantum wells and superlattices. To this end we consider a recently developed empirical tight‐binding model which carefully reproduces ab initio pseudopotential calculations and experimental results of bulk semiconductors. The present approach is particularly suited both for short‐period superlattices and large and complex unit cells where the transferability of the hopping parameters is required. First applications for ultrathin GaAs/AlAs superlattices and InGaAs/AlAs heterostructures are presented and discussed.