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Emission Due to Exciton Scattering by LO‐Phonons in Gallium Nitride
Author(s) -
Wojdak M.,
Wysmołek A.,
Pakuła K.,
Baranowski J.M.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<95::aid-pssb95>3.0.co;2-r
Subject(s) - exciton , phonon , scattering , physics , atomic physics , parity (physics) , recombination , scattering rate , condensed matter physics , kinetic energy , spontaneous emission , chemistry , quantum mechanics , laser , biochemistry , gene
The temperature dependence of the LO phonon assisted radiative recombination of free excitons (FE) in GaN is investigated and analyzed. The peak positions, line widths and ratio of intensities of the 1‐LO to 2‐LO phonon replicas of the FE emission have been investigated in the temperature range from 4.2 to 80 K. It has been found that for the 1‐LO phonon replica the probability of recombination of the free exciton is proportional to the exciton kinetic energy. This reflects the forbidden character of this scattering occurring through the intermediate 1S states of the same parity. It has been also found that for the 2‐LO phonon replica of FE the probability of recombination is independent of the exciton kinetic energy. This indicates the parity allowed character of the 2‐LO scattering, which occurs through the sequence of intermediate states with alternating parity.