Premium
Excitonic Thermalization and Recombination in Homoepitaxial Gallium Nitride
Author(s) -
Korona K.P.,
Kuhl J.,
Baranowski J.M.,
Porowski S.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<85::aid-pssb85>3.0.co;2-t
Subject(s) - exciton , thermalisation , photoluminescence , metalorganic vapour phase epitaxy , gallium nitride , recombination , excitation , chemical vapor deposition , gallium , materials science , biexciton , atomic physics , condensed matter physics , molecular physics , chemistry , optoelectronics , epitaxy , physics , nanotechnology , biochemistry , layer (electronics) , metallurgy , gene , quantum mechanics
We report temporally resolved photoluminescence (PL) measurements on a high‐quality single crystal GaN film grown on GaN substrates by metalorganic chemical vapour deposition (MOCVD). The PL decay times of free excitons and donor‐bound excitons have been measured at liquid helium temperature, under various excitation power densities. The excitonic temperature has been monitored by analysis of the shape of the excitonic peak and the cooling time of (100 ± 20) ps has been determined. Under higher excitation densities the recombination rates of both free and bound excitons are smaller (for the free exciton A the lifetime increases up to τ d = 200 ps). This observation can be explained by detrapping of donor bound excitons at higher excitonic temperatures.