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Local Vibrational Modes in p‐Type GaN Observed by Raman Scattering
Author(s) -
Harima H.,
Inoue T.,
Sone Y.,
Nakashima S.,
Ishida M.,
Taneya M.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<789::aid-pssb789>3.0.co;2-d
Subject(s) - annealing (glass) , raman spectroscopy , impurity , raman scattering , metalorganic vapour phase epitaxy , spectral line , analytical chemistry (journal) , materials science , passivation , doping , chemistry , optoelectronics , nanotechnology , optics , epitaxy , metallurgy , physics , organic chemistry , layer (electronics) , chromatography , astronomy
Abstract Raman spectra for Mg‐doped GaN films grown by MOCVD using H 2 as the carrier gas are investigated before and after annealing. Some local vibrational modes related to Mg and H are observed, showing drastic changes by annealing. The spectra show clearly that H impurities incorporated in as‐grown films, which passivate Mg acceptors, are released from the Mg–N bonding by annealing. When N 2 gas is used instead of H 2 as the carrier gas, the acceptors are not passivated by H, and p‐type conduction is obtained in as‐grown films. These features are also clearly observed in the spectra.