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Observation of Phonon Modes in Bulk InGaN Films by Raman Scattering
Author(s) -
Harima H.,
Kurimoto E.,
Sone Y.,
Nakashima S.,
Chu S.,
Ishida A.,
Fujiyasu H.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<785::aid-pssb785>3.0.co;2-t
Subject(s) - phonon , sapphire , raman spectroscopy , raman scattering , materials science , epitaxy , scattering , condensed matter physics , spectroscopy , optoelectronics , optics , laser , nanotechnology , layer (electronics) , physics , quantum mechanics
Thick In x Ga 1— x N layers were grown by hot wall epitaxy on sapphire substrates without thick GaN buffer layers, and the E 2 phonon mode was clearly observed by a non‐resonant Raman spectroscopy for the first time. In the measured range of In content, x < 0.07, the phonon frequency showed a linear variation with the In content between the corresponding values for pure GaN and InN compounds.