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High‐Frequency Electron Mobility in GaN
Author(s) -
Caetano E.W.S.,
da Costa J.A.P.,
Freire V.N.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<737::aid-pssb737>3.0.co;2-4
Subject(s) - wurtzite crystal structure , electric field , electron , electron mobility , terahertz radiation , wide bandgap semiconductor , materials science , condensed matter physics , range (aeronautics) , phase (matter) , optoelectronics , physics , quantum mechanics , zinc , metallurgy , composite material
The complex mobility behavior of electrons in wurtzite and zincblende GaN subjected to dc and ac (frequency in the THz range) parallel electric fields E = E dc + E ac cos ( ωt ) is studied. For the same E dc and E ac electric field intensities, the real and complex mobility components are stronger in the zincblende than in the wurtzite GaN phase.