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Electron Transport in MOVPE GaN Grown on Silicon Nitride Treated Sapphire
Author(s) -
Eshghi H.,
Lancefield D.,
Beaumont B.,
Gibart P.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<733::aid-pssb733>3.0.co;2-k
Subject(s) - materials science , sapphire , metalorganic vapour phase epitaxy , dislocation , condensed matter physics , boltzmann equation , electron mobility , atmospheric temperature range , scattering , optoelectronics , silicon , silicon on sapphire , relaxation (psychology) , gallium nitride , wide bandgap semiconductor , nitride , layer (electronics) , epitaxy , optics , nanotechnology , silicon on insulator , physics , composite material , thermodynamics , psychology , social psychology , laser
Electron transport in GaN is of interest because of its importance in a range of electronic and optoelectronic devices. However, the intrinsic properties may be modified by the presence of scattering centres introduced either as a result of impurities or dislocations incorporated during growth. Here we analyse the transport properties of a GaN layer deposited on silicon nitride treated sapphire substrates which has a dislocation density in the low 10 8 cm —2 range. Temperature dependent Hall effect and resistivity data have been analysed using a two‐band model including conduction band transport calculated using a relaxation time approximation and an iterative solution of the Boltzmann equation. A good fit has been obtained self‐consistently to both the mobility and carrier density over a wide temperature range with no significant contribution from dislocation scattering.