Premium
Thermodynamic Analysis on the MOVPE Growth of Nitride Semiconductors Using Hydrazine
Author(s) -
Koukitu A.,
Kumagai Y.,
Kubota N.,
Seki H.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<707::aid-pssb707>3.0.co;2-g
Subject(s) - metalorganic vapour phase epitaxy , indium nitride , nitride , hydrazine (antidepressant) , chemical vapor deposition , materials science , indium , semiconductor , gallium nitride , hydrogen , deposition (geology) , thermodynamic equilibrium , inorganic chemistry , chemistry , nanotechnology , thermodynamics , optoelectronics , epitaxy , organic chemistry , paleontology , physics , layer (electronics) , chromatography , sediment , biology
A thermodynamic analysis is performed on the MOVPE growth of nitride semiconductors using hydrazine (N 2 H 4 ) instead of NH 3 . Equilibrium partial pressures are calculated for various deposition parameters and growth regions are examined. It is predicted that the growth of nitride occurs drastically in the N 2 H 4 system, especially for the indium containing nitride without the deposition of In droplets. It is also shown that the composition unstable region for InGaN is suppressed in the N 2 H 4 system and the effect of hydrogen on the composition of InGaN is small in the N 2 H 4 system compared with the NH 3 system.