Premium
Free‐Carrier Response and Lattice Modes of Group III‐Nitride Heterostructures Measured by Infrared Ellipsometry
Author(s) -
Schubert M.,
Woollam J.A.,
Kasic A.,
Rheinländer B.,
Off J.,
Kuhn B.,
Scholz F.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<655::aid-pssb655>3.0.co;2-8
Subject(s) - heterojunction , ellipsometry , materials science , infrared , free carrier , sapphire , nitride , optoelectronics , phonon , anisotropy , dielectric , epitaxy , wurtzite crystal structure , thin film , optics , condensed matter physics , nanotechnology , laser , physics , zinc , layer (electronics) , metallurgy
Abstract We report on the application of infrared spectroscopic ellipsometry (IR‐SE) for wavelengths from 3 to 30 μm as a novel approach for nondestructive optical characterization of free‐carrier and optical‐phonon properties of group III‐nitride heterostructures grown by metal‐organic vapor phase epitaxy on sapphire. Model calculations for the ordinary ( ϵ ⊥ ) and extraordinary ( ϵ ∥ ) dielectric functions of the heterostructure components provide sensitivity to the IR‐active phonon frequencies and anisotropy of the free‐carrier response.