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The Atomic Structure of Threading Dislocations from Low‐Angle to High‐Angle Grain Boundaries in GaN/Sapphire Epitaxial Layers
Author(s) -
Potin V.,
Nouet G.,
Ruterana P.,
Pond R.C.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<645::aid-pssb645>3.0.co;2-c
Subject(s) - grain boundary , sapphire , materials science , dislocation , epitaxy , threading (protein sequence) , condensed matter physics , partial dislocations , crystallography , plane (geometry) , geometry , optics , composite material , physics , chemistry , mathematics , microstructure , layer (electronics) , laser , nuclear magnetic resonance , protein structure
In GaN epitaxial layers, due to the mosaic growth mode, a large density of threading dislocations is present bounding misorientated grains ( θ < 5°). Besides these low‐angle grain boundaries, high‐angle grain boundaries can be present as well. Here, we present an analysis of the Σ = 7 boundary using circuit mapping in order to define the Burgers vectors of the dislocations. In certain areas, the boundary is symmetric with the (213‐0) boundary plane. The periodic structure is comprised of an array of only one dislocation type. However, the cores of these dislocations possess more than one atomic configuration.