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Photoluminescence Intensity and Spectral Distribution of GaN Films on SiC Substrates — The Dependence on Dislocation Density and Structure
Author(s) -
Hacke P.,
Kuramata A.,
Domen K.,
Horino K.,
Tanahashi T.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<639::aid-pssb639>3.0.co;2-0
Subject(s) - dislocation , materials science , photoluminescence , luminescence , condensed matter physics , relaxation (psychology) , diffusion , enhanced data rates for gsm evolution , optoelectronics , molecular physics , crystallography , optics , composite material , chemistry , physics , psychology , social psychology , telecommunications , computer science , thermodynamics
GaN samples were grown having threading dislocation density in the range of 5.5 × 10 8 to 5 × 10 10 cm —2 . The decrease of the band edge luminescence which occurs as the dislocation density increases is measured and numerically simulated with minority carrier diffusion length L = 90 nm. The emitted band edge luminescence intensity and wavelength has a spatial distribution which depends on the dislocation structure in the crystal. An observed trend toward lower energy of the band edge peak as the dislocation density increases indicates that some relaxation of the SiC/GaN interfacial misfit stress occurs through the defects.