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Emission Quantum Efficiency of Undoped and Eu Doped GaN Determined by Photocalorimetric Spectroscopy
Author(s) -
Maruyama T.,
Sasaki H.,
Morishima S.,
Akimoto K.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<629::aid-pssb629>3.0.co;2-4
Subject(s) - doping , quantum efficiency , luminescence , materials science , spectroscopy , spontaneous emission , emission spectrum , photoluminescence , radiative transfer , quenching (fluorescence) , non radiative recombination , optoelectronics , analytical chemistry (journal) , atomic physics , spectral line , chemistry , semiconductor , physics , fluorescence , optics , semiconductor materials , laser , quantum mechanics , astronomy , chromatography
The external emission quantum efficiencies were measured for undoped and Eu doped GaN by means of photocalorimetric spectroscopy (PCS). From the temperature dependence of the quantum efficiency, activation energies for thermal quenching of luminescence were evaluated for two undoped samples. It was found that the activation energies are almost the same at low temperature between two undoped samples, in spite of the difference in luminescence property. This may be due to the difference in the density of the non‐radiative recombination centers. We also measured PCS spectra for Eu doped GaN with red emission around 623 nm. PCS results show that the quantum efficiency of Eu doped GaN is extremely stable against temperature variation. The advantage of Eu doped GaN is shown to be a stable optoelectronic material against temperature variation.