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Optical Properties of As‐Grown, α‐Particle Irradiated and N + 2 ‐Ion Implanted GaN
Author(s) -
Kunert H.W.,
Juillaguet S.,
J. Camassel J.,
Malherbe J.B.,
Odendaal R.Q.,
Brink D.J.,
Prinsloo L.C.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<619::aid-pssb619>3.0.co;2-8
Subject(s) - ion implantation , raman spectroscopy , materials science , sapphire , photoluminescence , irradiation , optoelectronics , doping , ion , chemistry , optics , laser , physics , organic chemistry , nuclear physics
We report an investigation of the optical response of unintentionally doped GaN on sapphire submitted to alpha particle irradiation and N + 2 ‐ion implantation at 5 keV. Probing the resulting damage by Raman spectroscopy we find that, upon implantation, the ratio of A 1 (LO) and E 2 modes increases. This shows that some free‐carrier activation accompanies the implantation damages. Probing next the change in optical response by low temperature photoluminescence, we demonstrate a complex behavior of the near‐band‐edge (NBE) excitonic lines which is discussed in terms of implantation‐induced effects.