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Incorporation of Deep Defects in GaN Induced by Doping and Implantation Processes
Author(s) -
Krtschil A.,
Witte H.,
Lisker M.,
Christen J.,
Krost A.,
Birkle U.,
Einfeldt S.,
Hommel D.,
Wenzel A.,
Rauschenbach B.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<587::aid-pssb587>3.0.co;2-t
Subject(s) - doping , materials science , sapphire , conductivity , carbon fibers , molecular beam epitaxy , optoelectronics , magnesium , admittance , analytical chemistry (journal) , epitaxy , chemistry , nanotechnology , optics , metallurgy , composite material , laser , physics , electrical engineering , layer (electronics) , engineering , chromatography , composite number , electrical impedance
Galliumnitride layers grown by molecular beam epitaxy on sapphire and doped with magnesium, calcium, and carbon as possible acceptors were investigated by optical admittance spectroscopy with respect to the existing deep defects. While p‐type conductivity was achieved by magnesium doping, calcium and carbon doping did not overcompensate the background n‐type conductivity. This phenomenon is explained by the generation of compensating defects, mainly electron traps and donors. A correlation between the creation of compensating centers and the flux of the doping element is observed. This doping induced defect introduction is compared with the effect of ion implantation, which generates additional intrinsic defects. These investigations lead to the conclusion, that the new donors due to carbon doping are nitrogen vacancies generating an electronic level at E C — (53 ± 8) meV.