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Electrical Properties of GaN Bulk Single Crystals Doped with Mg
Author(s) -
LitwinStaszewska E.,
Suski T.,
Grzegory I.,
Porowski S.,
Perlin P.,
Robert J.L.,
Contreras S.,
Wasik D.,
Witowski A.,
Cote D.,
Clerjaud B.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<567::aid-pssb567>3.0.co;2-0
Subject(s) - materials science , doping , annealing (glass) , resistive touchscreen , electrical resistivity and conductivity , magnesium , acceptor , conductivity , activation energy , analytical chemistry (journal) , condensed matter physics , optoelectronics , composite material , chemistry , metallurgy , physics , chromatography , electrical engineering , engineering
We have studied the electrical properties of magnesium doped bulk GaN crystals grown by high‐pressure, high‐temperature method. We discovered that while undoped bulk crystals are usually highly conductive, with increasing magnesium concentration they transform to highly resistive and eventually to p‐type material. For this type of samples the conductivity shows activated character with energy close to 150 meV characteristic of an Mg acceptor. Also we discovered that although annealing modifies the sample resistance it leaves the dominating transport mechanism unchanged. At lower temperatures transport seems to be governed by hopping conductivity.