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Defect Complexes in Highly Mg‐Doped GaN Studied by Raman Spectroscopy
Author(s) -
Kaschner A.,
Kaczmarczyk G.,
Hoffmann A.,
Thomsen C.,
Birkle U.,
Einfeldt S.,
Hommel D.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<551::aid-pssb551>3.0.co;2-s
Subject(s) - raman spectroscopy , molecular beam epitaxy , doping , annealing (glass) , spectroscopy , materials science , molecular vibration , raman scattering , chemistry , molecular physics , chemical physics , analytical chemistry (journal) , optoelectronics , epitaxy , nanotechnology , optics , organic chemistry , physics , layer (electronics) , quantum mechanics , composite material
We report on local vibrational modes (LVMs) in highly Mg‐doped GaN grown by molecular beam epitaxy. Two groups of LVMs in the region of GaN host phonons and in the vicinity of 2200 cm —1 are observed. We performed temperature‐dependent Raman‐scattering experiments and annealing experiments to investigate the defect complexes which are the origin of the high‐energy LVMs. The temperature‐dependent measurements show an unexpected hardening of the two most intense LVMs at 2166 and 2185 cm —1 . Furthermore, we found that all high‐energy modes disappeared after annealing at 1065 °C. The experimental results are discussed in terms of existing theoretical models.