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The Origin of Red Luminescence from Mg‐Doped GaN
Author(s) -
Bayerl M.W.,
Brandt M.S.,
Glaser E.R.,
Wickenden A.E.,
Koleske D.D.,
Henry R.L.,
Stutzmann M.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<547::aid-pssb547>3.0.co;2-8
Subject(s) - laser linewidth , photoluminescence , luminescence , doping , materials science , isotropy , optoelectronics , nuclear magnetic resonance , analytical chemistry (journal) , optics , chemistry , laser , physics , chromatography
In addition to broad photoluminescence (PL) bands at 3.2 and 2.8 eV, Mg‐doped GaN also exhibits a characteristic red PL band centered around 1.75 eV. Using optically detected magnetic resonance (ODMR), a deep defect with an isotropic g ‐value of 2.001 and a linewidth of 5 mT is found to be responsible for the red luminescence. Various shallow and deep donors are also found to participate in this radiative transition. The results are compared to the ODMR of n‐type GaN.