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Hot Electrons and Holes in Highly Photoexcited GaN Epilayers
Author(s) -
Žukauskas A.,
Tamulaitis G.,
Gaska R.,
Shur M.S.,
Khan M.A.,
Yang J.W.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<495::aid-pssb495>3.0.co;2-0
Subject(s) - electron , phonon , non equilibrium thermodynamics , excitation , luminescence , materials science , atomic physics , condensed matter physics , distribution function , spectral line , molecular physics , optoelectronics , physics , quantum mechanics , astronomy
In GaN epilayers an increase of the carrier temperature was deduced from the luminescence spectra under intense quasi‐steady‐state photogeneration. To account for the measured dependence of the electron temperature on the excitation power density, all relevant mechanisms of the nonequilibrium‐phonon production were considered. Finally, theoretical modeling yielded strong implications that, contrary to electrons, hot photogenerated holes maintain no Maxwellian distribution function above the threshold for the optical phonon emission.