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High‐Temperature Lasing in InGaN/GaN Multiquantum Well Heterostructures
Author(s) -
Marko I.P.,
Lutsenko E.V.,
Pavlovskii V.N.,
Yablonskii G.P.,
Schön O.,
Protzmann H.,
Lünenbürger M.,
Heuken M.,
Schneller B.,
Heime K.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<491::aid-pssb491>3.0.co;2-g
Subject(s) - lasing threshold , materials science , heterojunction , optoelectronics , laser , photoluminescence , quantum well , gallium nitride , optics , wavelength , nanotechnology , physics , layer (electronics)
Lasing, stimulated emission and photoluminescence in InGaN/GaN multiquantum well (MQW) heterostructures were investigated in a wide temperature interval from the liquid nitrogen temperature up to 600 K. Laser action was achieved up to T = 585 K in a heterostructure consisting of ten quantum wells with a width of 10 nm. Laser thresholds at T = 78, 300, and 585 K were 25, 100, and 550 kW/cm 2 , respectively. The pulse energy of the InGaN/GaN MQW laser at room temperature was 600 nJ and the average power was 0.6 mW. The characteristic temperature value of T 0 = 164 K was derived from the temperature dependence of the lasing threshold.