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Stimulated Emission and Excitonic Bleaching in GaN Epilayers under High‐Density Excitation
Author(s) -
Taylor R.A.,
Hess S.,
Kyhm K.,
Smith J.,
Ryan J.F.,
Yablonskii G.P.,
Lutsenko E.V.,
Pavlovskii V.N.,
Heuken M.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<465::aid-pssb465>3.0.co;2-c
Subject(s) - exciton , photoluminescence , excitation , materials science , luminescence , laser , range (aeronautics) , stimulated emission , atomic physics , wide bandgap semiconductor , enhanced data rates for gsm evolution , emission intensity , optoelectronics , optics , condensed matter physics , physics , telecommunications , quantum mechanics , computer science , composite material
Measurements of edge emission on a GaN epilayer under N 2 laser excitation demonstrate stimulated emission and gain. The mechanisms involved are investigated by using laser pulses of 250 fs duration to measure simultaneously the photoluminescence and the time‐resolved reflectance near the band edge, over a range of excitation densities. The excitons are bleached at high densities due to free carriers. A broad luminescence band is seen, extending ∼100 meV below the low‐density emission peak. We show that the onset of the stimulated emission coincides with the bleaching of the excitons (the Mott transition).