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Dynamics of the Bound Excitons in GaN Epilayers Grown by Hydride Vapor Phase Epitaxy
Author(s) -
Pozina G.,
Bergman J.P.,
Paskova T.,
Monemar B.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<45::aid-pssb45>3.0.co;2-0
Subject(s) - exciton , photoluminescence , epitaxy , sapphire , hydride , biexciton , materials science , acceptor , dissociation (chemistry) , chemistry , molecular physics , atomic physics , condensed matter physics , optoelectronics , physics , nanotechnology , optics , metal , laser , layer (electronics) , metallurgy
We report on time‐integrated and time‐resolved photoluminescence (PL) measurements in 80 μm thick GaN layers grown by hydride vapor phase epitaxy on sapphire substrates. The PL spectra are dominated by free exciton transitions and by three well‐resolved emissions assigned to the neutral‐donor‐bound exciton and two neutral‐acceptor‐bound exciton transitions at 3.478, 3.473 and 3.461 eV, respectively. A remarkably long radiative lifetime of 3600 ps was determined for the acceptor‐bound exciton with peak position at 3.461 eV. The temperature evolution of the recombination lifetime for the bound excitons suggests that the main nonradiative process is connected with dissociation of the bound excitons into free excitons, which is in agreement with the temperature dependences of the integrated PL intensities measured for bound and free exciton transitions.