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Optical Properties of Structures with Single and Multiple InGaN Insertions in a GaN Matrix
Author(s) -
Sakharov A.V.,
Lundin W.V.,
Krestnikov I.L.,
Semenov V.A.,
Usikov A.S.,
Tsatsulnikov A.F.,
Musikhin Yu.G.,
Baidakova M.V.,
Alferov Zh.I.,
Ledentsov N.N.,
Holst J.,
Hoffmann A.,
Bimberg D.,
Soshnikov I.P.,
Gerthsen D.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<435::aid-pssb435>3.0.co;2-o
Subject(s) - photoexcitation , materials science , lasing threshold , optoelectronics , quantum dot , laser , excitation , wavelength , optics , physics , electrical engineering , engineering
We report on growth and optical and structural characterisation of samples with single and multiple InGaN insertions in a GaN matrix. We found that InGaN insertions decompose to arrays of In‐rich nanodomains or quantum dots (QDs) with lateral sizes of 2 to 4 nm. High density of the QDs results in a possibility to achieve surface‐mode lasing under photoexcitation ( λ = 400 nm) in a structure with 12‐fold stacked InGaN insertions even without using of Bragg mirrors. We found that the threshold excitation density is weakly affected by temperature up to 120 K, while it increases at higher temperatures, a behavior typical for QD lasers. We also demonstrate a possibility to achieve gain in the bright‐blue and green spectral range using similar ultrathin insertions but with higher In content.