Premium
Screening of the Polarization Field in InGaN Single Quantum Wells
Author(s) -
Harris J.C.,
Kako S.,
Someya T.,
Arakawa Y.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<423::aid-pssb423>3.0.co;2-#
Subject(s) - doping , photoluminescence , quantum well , polarization (electrochemistry) , excitation , materials science , laser , optoelectronics , silicon , condensed matter physics , optics , chemistry , physics , quantum mechanics
We report time‐resolved photoluminescence measurements on In x Ga 1— x N/In y Ga 1— y N single quantum wells with different levels of silicon doping. Remarkable decay behaviour is observed in samples with zero or low doping and at high excitation powers: carrier lifetimes which decrease with time after the laser pulse. The results can be attributed to photoexcited carriers giving time‐dependent screening of the polarization field and to doping giving permanent screening.