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Influence of Internal Polarization Fields on the Disorder Broadening of Excitons in (In, Ga)N/GaN Quantum Wells
Author(s) -
Mayrock O.,
Wünsche H.J.,
Henneberger F.,
Brandt O.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<419::aid-pssb419>3.0.co;2-g
Subject(s) - exciton , condensed matter physics , dipole , polarization (electrochemistry) , quantum well , materials science , alloy , surface finish , chemistry , physics , optics , quantum mechanics , composite material , laser
We investigate theoretically the impact of internal polarization fields on the disorder broadening of excitons in (In, Ga)N/GaN quantum wells considering both uncorrelated alloy fluctuation and in‐plane‐correlated interface roughness in the frame of a center‐of‐mass separation approach. Not only the fluctuation of the band edges, but also the fluctuation of the long‐range polarization field of spontaneous and strain‐induced dipole moments are taken into account. The polarization field is found to induce a narrowing of the alloy contribution of the center‐of‐mass potential spectrum due to (i) penetration of the carriers into the barriers and (ii) increased exciton volume. Contributions from short‐range interface roughness slightly weaken the narrowing, but do not reverse this effect. In case of a long‐range interface roughness, a single‐line decomposition of the spectrum occurs.