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Polarization Induced Charge at Heterojunctions of the III–V Nitrides and Their Alloys
Author(s) -
Foutz B.E.,
Ambacher O.,
Murphy M.J.,
Tilak V.,
Eastman L.F.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<415::aid-pssb415>3.0.co;2-w
Subject(s) - heterojunction , materials science , nitride , optoelectronics , epitaxy , wide bandgap semiconductor , charge (physics) , nanotechnology , physics , layer (electronics) , quantum mechanics
Abstract We examine the bound charge present when the III‐nitride alloys, AlGaN, InGaN, and AlInN, are pseudomorphically grown on templates of relaxed GaN, InN, and AlN epitaxial layers. The advantages of yet unrealized heterojunctions, such as AlInN/InN, are compared with the more common AlGaN/GaN heterojunction. Special attention is paid to AlInN/GaN where a lattice matched and a zero total bound charge heterojunction are possible.