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Discrete Stark‐Like Ladder in Piezoelectric GaInN/GaN Quantum Wells
Author(s) -
Wetzel C.,
Kasumi M.,
Detchprohm T.,
Takeuchi T.,
Amano H.,
Akasaki I.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<399::aid-pssb399>3.0.co;2-p
Subject(s) - photoluminescence , quantum well , materials science , piezoelectricity , optoelectronics , diode , luminescence , light emitting diode , laser , stark effect , photoluminescence excitation , excitation , condensed matter physics , spectral line , optics , physics , astronomy , composite material , quantum mechanics
The optical properties and their relation to the electronic bandstructure in Si‐doped GaInN/GaN multiple quantum well structures typical for near UV laser diode devices are investigated in photoluminescence, photoluminescence excitation and photoreflection spectroscopies. A set of four evenly spaced levels N 0 ··· N 3 is identified covering the spectral range from the lowest luminescence band (N 3 ) to the GaN barrier energy (N 0 ). The splitting of N 3 and N 2 appears as a discrete splitting rather than a continuous localization process. The level splitting is well described by a Stark‐like ladder defined by the multi interface bandoffset Δ E = FeL z across the piezoelectric GaN/GaInN/GaN structure.