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Confined Excitons in GaN–AlGaN Quantum Wells
Author(s) -
Bigenwald P.,
Lefebvre P.,
Bretag T.,
GilBigenwald B.
Publication year - 1999
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199911)216:1<371::aid-pssb371>3.0.co;2-s
Subject(s) - exciton , quantum well , oscillator strength , formalism (music) , envelope (radar) , electron , biexciton , condensed matter physics , radiative transfer , physics , quantum , materials science , quantum mechanics , spectral line , art , musical , radar , telecommunications , computer science , visual arts , laser
We calculate the original properties of excitons in GaN–AlGaN quantum wells by a variational approach in the envelope function formalism. The separation of electrons and holes by huge internal electric fields induces an enhanced dependence of exciton binding energy and oscillator strength on the well width. We demonstrate the necessity to perform excitonic calculations for obtaining, in particular, reliable values of oscillator strengths (thus radiative lifetimes), which are extremely sensitive to the well width.